features ? transparent epoxy potting ? high sensitivity ? broad directivity ? unbiased for low frequency or biased for high frequency measurement applications ? optical switches ? optical encoders ? pulse detector s ? sensors and industrial controls si photodiode KPD1203K 0.92x0.92 8 27 10 35 10 15 4 9 (units: mm) k1 1 anode 2 cathode ?.2 ?.7 max ?.45 transparent epoxy resin 2.54 45? 1 1 2.0 3.0 0.3 13.5 2 1 to-18 KPD1203K maximum ratings units item symbol value reverse voltage operating temperature storage temperature forward current a i f i r v r t op t stg v ?c ?c 500 60 ma reverse current 15 -20 ~ +100 -30 ~ +100 5 0 0.1 50 60 1000lux(@2856k) parameter capacitance v r0 i sh i d c v op symbol mm v nm a na pf mv v = 0, f = 1mhz test conditions max. typ. min. active dia. d operating voltage 950( l p ) 1100 l p =peak wavelength 1 v r =5v, l= 780nm, r l =50 ns mhz v r =5v, l= 780nm, r l =50 rise/fall time cutoff frequency sensitive wavelength dark current v r =5v for low frequency for high frequency f c t r t f 450 characteristics (t a =25 ?c unless otherwise noted.) open circuit voltage short circuit current units 320 400 l
KPD1203K 10 -12 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -11 10 -10 10 -9 10 -8 400 600 800 1000 1200 w a v e length (nm) relativ e sensitivity (%) 0 80 70 60 50 40 30 20 10 0 5 10 15 bias ( v ) capacitance ( p f) 0 5 10 15 bias ( v ) dar k current (a) 100 80 60 40 20 0 10 -15 -5 0 5 -25 0 50 25 75 100 ambient t emper ature t a ( ? c) -30 -10 -20 10 0 10 5 10 6 10 7 f requency ( hz ) relativ e gain (db) dar k current i d (a) 10 -1 10 -2 10 0 10 2 10 1 10 3 10 4 illuminance l ( lux ) photocurrent i sh ( a) -90 -80 -70 -60 -50 -40 -30 +90 +80 +70 +60 +50 +40 +30 0 100 0 +10 +20 -10 -20 50 angle (deg.) directivity relativ e sensitivity (%) photocurrent-illuminance ( t a =25 ? c ) dar k current -ambient t emper ature (v r =10v) spectr al sensitivity f requency response dar k current-re v erse v oltage ( t a =25 ? c ) cv char astar istics 1203k 1203k -3db
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